Self-Organized GaN Quantum Wire UV Lasers

Much improved self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy

A self-organized In0.53Ga0.47As/(In0.53Ga0.47As)2(In0.44Al0.56As)2 quantum wire (QWR) laser was grown on a (775)B InP substrate by molecular beam epitaxy (MBE). Well lattice-matched and flat cladding layers were grown at a rather high temperature (595 C). Lateral confinement potential was induced by a nano-meter scale interface corrugation of InGaAs/(InGaAs)2(InAlAs)2 with an amplitude of 2 nm ...

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Self-organized quantum-wire lattice via step flow growth of a short-period superlattice.

We develop a theoretical model for step flow growth of multilayer films, taking into account the interlayer step-step interaction induced by misfit strain. We apply the model to simulate the growth of strain-compensated short-period superlattices. Step-bunch ordering improves in successive layers, leading to self-organized growth of a lattice of quantum wires. This quantum-wire array has some s...

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski-Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled the growth of dense lying dot...

Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers

Solid-state light-emitting devices with the capability of electrically controlled wavelength switching may become important for read and write operations, chip-to-chip interconnects, and wavelength-division multiplexing. There have been extensive studies of optical bistability in semiconductor lasers with intracavity saturable absorbers. Such devices have been successfully used as memory elemen...